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Revista Técnica de la Facultad de Ingeniería Universidad del Zulia
versão impressa ISSN 0254-0770
Resumo
DURAN-FLORES, Larissa e FONTHAL, Gerardo. URBACHS TAIL IN INDIRECT BAND-GAP SEMICONDUCTORS. Rev. Téc. Ing. Univ. Zulia [online]. 2003, vol.26, n.1, pp.3-9. ISSN 0254-0770.
Abstract In this work, the band tail parameters in GaP, Ge and Si, indirect band gap semiconductors, have been studied using the published data. It is established that the optical absorption edge in these materials obeys Urbachs Rule. It is also found that the structural disorder in monocrystalline materials is around zero, due to the natural disorder of the crystal lattice. The width of the exponential tail or Urbachs energy is found between 20 and 39meV at 77K and 60-70meV at 300K. Also, the steepness parameter s is above 0.55, indicating a strong phonon interaction typical in indirect band gap semiconductors.
Palavras-chave : Indirect band gap; optical absorption; band tails; Urbachs rule.
