Abstract

TORCHYNSKA, T. V et al. OPTICAL PHENOMENA IN Si LOW-DIMENSIONAL STRUCTURES DEPENDENT ON MORPHOLOGY AND SILICON OXIDE COMPOSITION ON Si SURFACE . Rev. LatinAm. Met. Mat. [online]. 2001, vol.21, n.2, pp.41-45. ISSN 0255-6952.

It has been shown that intensive and broad "red" photoluminescence band in porous silicon is non-elementary one and could be decomposed on at least three elementary bands. Photoluminescence, ultra-soft X-ray emission spectroscopy, infrared absorption and Atomic Force Microscopy methods were used to study the reasons of both luminescence band appearance in porous silicon photoluminescence spectra, prepared at different electrochemical etching conditions. The mechanisms of radiative transition for both elementary bands have been discussed as well.

Keywords : Porous Silicon; PSi; Photoluminiscence; PL; Atomic Force Microscopy; AFM; Ultra-soft X-ray emission spectroscopy; USXES; Infrared absorption; IR absorption.