Abstract

GALLEGO, J.L et al. Caracterización raman y edx de películas delgadas de CN_X crecidas por ablación láser. Rev. LatinAm. Metal. Mater. [online]. 2009, vol.29, n.2, pp.109-114. ISSN 0255-6952.

In the present study a-CN_x amorphous carbon nitride thin films were deposited using a pyrolytic graphite target with a purity of 5N on silicon (100) substrate in a nitrogen gas atmosphere using pulsed laser deposition technique. We used a Nd:YAG laser with laser fluence of 10 J/cm². The films were characterized by μ-Raman spectroscopy and Energy Dispersive X-ray ED_X microanalysis. The Raman spectra showed the characteristic peaks of amorphous carbon D (1354 cm^-1) and G (1555 cm^-1), corresponding to sp² bonding. The peak intensity ratio (I_D/I_G) from Raman spectra increases as substrate temperature and nitrogen gas pressure increase. The (EDX) analysis confirmed the presence of C, N elements. The plume plasma produced by laser was characterized by optical emission spectroscopy. From the emission spectra, carbon and nitrogen atomic species and CN molecule were indentified.

Keywords : Carbon nitride; Laser ablation; Raman spectroscopy.