Resumo

POWER, Chrystian; GRIMA-GALLARDO, Pedro; MUNOZ, Marcos A  e  MOLINA, Ildefonso. HIGH TEMPERATURE DEPENDENCE (300-750)k OF THE ENERGY GAP OF SEMICONDUCTORS COMPOUND CuInVi2 (S, Se, Te).. Rev. LatinAm. Metal. Mater. [online]. 2011, vol.31, n.2, pp.134-137. ISSN 0255-6952.

Optical absorption measurements as a function of high temperature (300 to 750)K on semiconductor direct energy gap CuInVI₂ (S, Se and Te) were performed in the visible light spectrum. These results are used to determine the value of the fundamental direct energy gap Eg as a function of temperature T, through classical theoretical models. The dEg/dT parameter obtained in the range of high temperature in the ternary semiconductor compounds CuInS₂, CuInSe₂ and CuInTe₂ are -3.3x10^-4eVK^-1, -2.1x10^-4eVK^-1 and -5.3x10^-4eVK^-1 respectively, these results will be compared with those reported to date in lower ranges of temperatures (T <300K)

Palavras-chave : Semiconductors; optical absorption; energy gap; high temperature.