Abstract

DELGADO, Gerzon E et al. Crystal structure of the ternary semiconductor Cu₂GeSe₄. Rev. LatinAm. Metal. Mater. [online]. 2015, vol.35, n.1, pp.34-38. ISSN 0255-6952.

The ternary semiconductor compound Cu₂GeSe₄ has been characterized by means of X-ray powder diffraction and refined by the Rietveld method. This compound crystallizes in the cubic system, space group F 3m (Nº 216), Z = 1, with unit cell parameters a = 5.5815(3) Å and V = 173.88 (3) ų. The refinement of 10 instrumental and structural parameters converged to the figures of merit R_p= 4.4%, R_wp= 6.8%, R_exp= 5.5%, R_B= 6.0% and S= 1.2 for 4001 step intensities and 28 independent reflections. The Cu₂GeSe₄ structure can be described as derivative of the zincblende where Zn atoms are replaced by Cu and Ge atoms, and cationic vacancies.

Keywords : Semiconductor; Crystal structure; Rietveld refinement.

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