Abstract

DELGADO, Gerzon E et al. X-ray powder diffraction data and rietveld refinement of the ternary semiconductor chalcogenides AgInSe₂ and AgInTe₂. Rev. LatinAm. Metal. Mater. [online]. 2015, vol.35, n.1, pp.110-117. ISSN 0255-6952.

The ternary chalcogenides AgInSe₂ and AgInTe₂ were studied by X-ray powder diffraction structure refinement using the Rietveld method. Both compounds crystallizes with a chalcopyrite structure in the space group I 2d (N° 122), Z = 4, and unit cell parameters a = 6.0988(2) Å, c = 11.7086(6) Å, V = 435.51(3) ų for AgInSe₂ and a = 6.4431(4) Å, c = 12.6362(9) Å, V = 524.57(6) ų for AgInTe₂. Improved X-ray powder diffraction data are reported with figures of merit M₁₉ = 84.0, F₁₉ = 40.7 (0.0071, 66) for AgInSe₂, and M₂₀ = 80.8, F₂₃ = 39.0 (0.0075, 79) for AgInTe₂.

Keywords : Semiconductors; Chalcogenides; Rietveld refinement; X-ray powder diffraction data.

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