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Revista Latinoamericana de Metalurgia y Materiales
versão impressa ISSN 0255-6952
Resumo
OROZCO HERNANDEZ, Giovany e OLAYA FLOREZ, Jhon Jairo. Structural and morphological properties of Bi(X)Si(Y)O(Z) thin films prepared via unbalanced magnetron sputtering. Rev. LatinAm. Metal. Mater. [online]. 2015, vol.35, n.2, pp.237-241. ISSN 0255-6952.
Bismuth-silicon-oxygen-based thin films were prepared via an unbalanced magnetron sputtering system in a reactive atmosphere with a mixture of argon and oxygen at room temperature. It is clear that this technique is highly environmentally friendly and does not produce toxic products or gases during or after the process. These films exhibited high homogeneity and constant thickness around 200 nm. The structural properties of the films were analyzed by means of X-ray diffraction, which mainly showed the presence of bismuth and bismuth oxide. As for the morphological properties, con-focal microscopy measurements showed good homogeneity over the surface as well as low average roughness, which indicates good thickness uniformity.
Palavras-chave : Bismuth-silicon-oxygen; UBM; X-ray diffraction; thin films.












