Abstract

DUGARTE, Analio et al. On the structure of the semiconductor tlins₂. Rev. LatinAm. Metal. Mater. [online]. 2016, vol.36, n.2, pp.217-224. ISSN 0255-6952.

After reviewing a recently reported structural study of the semiconductor TlInS₂, it was found that the unit cell proposed in the study does not satisfactorily index the X-ray powder diffraction pattern recorded for the above mentioned semiconductor. In this contribution, a different monoclinic unit cell that is able to properly index the 28 diffraction maxima of the registered pattern is presented. The parameters of the monoclinic unit cell obtained are: a=10.884(4) Å, b=10.921(5) Å, c=15.113(6) Å, β=100.54 (8)°, which are very similar to the parameters of one of the unit cells previously reported for this material. The structure refinement carried out using the Rietveld Method showed that the structure of the material under study is the same one reported previously in space group C2/c (No. 15).

Keywords : TlInS₂; Semiconductors; X-Ray Diffraction; Rietveld method.

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