Resumen

FERNANDEZ-ROJAS, FREDDY et al. Thermal conductivity in metals, semiconductors, dielectrics and amorphous materials. Rev. Fac. Ing. UCV [online]. 2008, vol.23, n.3, pp.5-15. ISSN 0798-4065.

We studied the physics underlying thermal conductivity and the most important thermal properties in a myriad of materials. Thermal conductivity is determined by different phonons or electron scattering mechanisms that limit the transport of thermal energy inside the solid. For the sake of the analysis, thermal conductivity close to 80% of melting point in metals is elevated (~300 W/mK) and low in semiconductors (~22 W/mK); is lower in dielectrics (~6 W/mK) and is very low in amorphous materials (~1,5 W/mK). The very low thermal conductivity in amorphous materials is a consequence of the atomic disorder, the occurrence of scattering processes associated with the existence of asymmetric double-well potential and localized vibrational modes. The purpose of this study is to review existing theories explaining the thermal conductivity of solids and so identify issues or relevant physical processes with regard to conditions of very high temperature and near to the melting point that could be important when studying thermal conductivity. This would allow us to place the findings in a framework that could guide the functionalization and preparation of materials that can be used in the elaboration of the new generation of thermal barrier coatings. Our interest is restricted to the study of thermal conductivity at very high temperatures in dielectric solids, where we found that the contribution of phonons with a free path of the order of an interatomic spacing is very important and in some cases we also found relevant the contribution of electrons and/or localized phonons (fractons).

Palabras clave : Thermal conductivity; Phonons; Electrons; Fractons; Localized phonons; Thermal barriers coating.