Resumo

MALOBABIC, Slavica; ORTIZ-CONDE, Adelmo; GARCIA SANCHEZ, Francisco J  e  MUCI, Juan. One-dimensional model of the undoped oxide-silicon-oxide system. uct [online]. 2006, vol.10, n.40, pp.225-234. ISSN 1316-4821.

A physical model of the one-dimensional undoped oxide-silicon-oxide system is presented based on the solution of its potential versus distance. It is proved that both previous approximate analytical solutions, for the cases when the electric field does and does not vanish inside the semiconductor, are completely equivalent. Approximate asymptotic analytical solutions are presented and compared to exact numerical results calculated by iteration. Analytic approximations for surface potentials in strong- and weak-conduction are also obtained. The results attest to the excellent accuracy of this formulation.

Palavras-chave : MOS compact modeling; Single MOSFET; Undoped body MOS; Intrinsic channel; SOI.